STB33N60DM2 Priser (USD) [37935stk Lager]
- 1 pcs$1.03072
- 1,000 pcs$0.91752
- Delnummer:
- STB33N60DM2
- Produsent:
- STMicroelectronics
- Detaljert beskrivelse:
- MOSFET N-CH 600V 24A.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Tyristorer - TRIAC, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Dioder - Zener - Arrays, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - Arrays, pre-partisk and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in STMicroelectronics STB33N60DM2 electronic components. STB33N60DM2 can be shipped within 24 hours after order. If you have any demands for STB33N60DM2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB33N60DM2 Produktegenskaper
Delnummer :
STB33N60DM2
Produsent :
STMicroelectronics
Beskrivelse :
MOSFET N-CH 600V 24A
Serie :
MDmesh™ DM2
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
130 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
43nC @ 10V
Vgs (maks) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
1870pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
190W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D2PAK
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Siste nytt
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