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- Delnummer:
- IPP10N03LB G
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 30V 50A TO-220.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - RF, Transistorer - programmerbar enhet, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - Singel, Power Driver-moduler, Transistorer - IGBT-er - moduler, Dioder - likerettere - matriser and Transistorer - Bipolar (BJT) - RF ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPP10N03LB G electronic components. IPP10N03LB G can be shipped within 24 hours after order. If you have any demands for IPP10N03LB G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP10N03LB G Produktegenskaper
Delnummer :
IPP10N03LB G
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 30V 50A TO-220
Serie :
OptiMOS™
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
9.9 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2V @ 20µA
Gate Lading (Qg) (Max) @ Vgs :
13nC @ 5V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1639pF @ 15V
FET-funksjon :
-
Effektdissipasjon (maks) :
58W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO220-3-1
Pakke / sak :
TO-220-3
Siste nytt
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