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- Delnummer:
- SI4831BDY-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET P-CH 30V 6.6A 8-SOIC.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Transistorer - IGBT-er - Arrays, Dioder - Zener - Arrays, Tyristorer - DIAC, SIDAC, Dioder - likerettere - matriser, Transistorer - JFET-er, Transistorer - FET, MOSFET - Arrays and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SI4831BDY-T1-GE3 electronic components. SI4831BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4831BDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4831BDY-T1-GE3 Produktegenskaper
Delnummer :
SI4831BDY-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET P-CH 30V 6.6A 8-SOIC
Serie :
LITTLE FOOT®
Delstatus :
Obsolete
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
42 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
26nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
625pF @ 15V
FET-funksjon :
Schottky Diode (Isolated)
Effektdissipasjon (maks) :
2W (Ta), 3.3W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SO
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
Siste nytt
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