STQ1NK80ZR-AP Priser (USD) [277206stk Lager]
- 1 pcs$0.13343
- 2,000 pcs$0.11923
- Delnummer:
- STQ1NK80ZR-AP
- Produsent:
- STMicroelectronics
- Detaljert beskrivelse:
- MOSFET N-CH 800V 0.3A TO-92.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - Arrays, Transistorer - Bipolar (BJT) - RF, Tyristorer - TRIAC, Dioder - Zener - Singel, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - IGBT-er - moduler, Tyristorer - SCR-er - moduler and Power Driver-moduler ...
- Konkurransefordel:
- We specialize in STMicroelectronics STQ1NK80ZR-AP electronic components. STQ1NK80ZR-AP can be shipped within 24 hours after order. If you have any demands for STQ1NK80ZR-AP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STQ1NK80ZR-AP Produktegenskaper
Delnummer :
STQ1NK80ZR-AP
Produsent :
STMicroelectronics
Beskrivelse :
MOSFET N-CH 800V 0.3A TO-92
Serie :
SuperMESH™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
800V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
16 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 50µA
Gate Lading (Qg) (Max) @ Vgs :
7.7nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
160pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
3W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-92-3
Pakke / sak :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Siste nytt
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