IPW60R125P6XKSA1 Priser (USD) [17447stk Lager]
- 1 pcs$2.04044
- 10 pcs$1.82229
- 100 pcs$1.49446
- 500 pcs$1.21014
- 1,000 pcs$0.96826
- Delnummer:
- IPW60R125P6XKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 600V TO247-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - Arrays, Dioder - Zener - Singel, Dioder - Bridge likerettere, Tyristorer - SCR-er - moduler, Transistorer - IGBT-er - moduler, Transistorer - programmerbar enhet, Transistorer - FET, MOSFET - RF and Dioder - Zener - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPW60R125P6XKSA1 electronic components. IPW60R125P6XKSA1 can be shipped within 24 hours after order. If you have any demands for IPW60R125P6XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPW60R125P6XKSA1 Produktegenskaper
Delnummer :
IPW60R125P6XKSA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 600V TO247-3
Serie :
CoolMOS™ P6
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
125 mOhm @ 11.6A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 960µA
Gate Lading (Qg) (Max) @ Vgs :
56nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2660pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
219W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO247-3
Pakke / sak :
TO-247-3
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