TK8Q65W,S1Q Priser (USD) [59949stk Lager]
- 1 pcs$0.71913
- 75 pcs$0.57949
- 150 pcs$0.52154
- 525 pcs$0.40564
- 1,050 pcs$0.31793
- Delnummer:
- TK8Q65W,S1Q
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 650V 7.8A IPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - IGBT-er - singel, Tyristorer - SCR-er - moduler, Transistorer - IGBT-er - moduler, Dioder - Bridge likerettere, Transistorer - IGBT-er - Arrays, Transistorer - spesialformål and Dioder - Zener - Arrays ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK8Q65W,S1Q electronic components. TK8Q65W,S1Q can be shipped within 24 hours after order. If you have any demands for TK8Q65W,S1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK8Q65W,S1Q Produktegenskaper
Delnummer :
TK8Q65W,S1Q
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 650V 7.8A IPAK
Serie :
DTMOSIV
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
7.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
670 mOhm @ 3.9A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 300µA
Gate Lading (Qg) (Max) @ Vgs :
16nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
570pF @ 300V
FET-funksjon :
-
Effektdissipasjon (maks) :
80W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
I-PAK
Pakke / sak :
TO-251-3 Stub Leads, IPak
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