ZXMN3F31DN8TA Priser (USD) [193225stk Lager]
- 1 pcs$0.19142
- 500 pcs$0.10528
- Delnummer:
- ZXMN3F31DN8TA
- Produsent:
- Diodes Incorporated
- Detaljert beskrivelse:
- MOSFET 2N-CH 30V 5.7A 8SOIC.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Singel, Tyristorer - DIAC, SIDAC, Transistorer - IGBT-er - moduler, Tyristorer - SCR-er - moduler, Dioder - Variabel kapasitet (Varicaps, Varactors) and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
- Konkurransefordel:
- We specialize in Diodes Incorporated ZXMN3F31DN8TA electronic components. ZXMN3F31DN8TA can be shipped within 24 hours after order. If you have any demands for ZXMN3F31DN8TA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN3F31DN8TA Produktegenskaper
Delnummer :
ZXMN3F31DN8TA
Produsent :
Diodes Incorporated
Beskrivelse :
MOSFET 2N-CH 30V 5.7A 8SOIC
Serie :
-
Delstatus :
Active
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5.7A
Rds On (Max) @ Id, vgs :
24 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
608pF @ 15V
Kraft - Maks :
1.8W
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
Leverandørenhetspakke :
8-SO
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