STB7ANM60N Priser (USD) [59536stk Lager]
- 1 pcs$0.65675
- 1,000 pcs$0.58685
- Delnummer:
- STB7ANM60N
- Produsent:
- STMicroelectronics
- Detaljert beskrivelse:
- MOSFET N-CH 600V DPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Dioder - RF, Tyristorer - SCR, Transistorer - JFET-er, Dioder - Zener - Singel, Transistorer - FET, MOSFET - En, Transistorer - IGBT-er - Arrays and Tyristorer - TRIAC ...
- Konkurransefordel:
- We specialize in STMicroelectronics STB7ANM60N electronic components. STB7ANM60N can be shipped within 24 hours after order. If you have any demands for STB7ANM60N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB7ANM60N Produktegenskaper
Delnummer :
STB7ANM60N
Produsent :
STMicroelectronics
Beskrivelse :
MOSFET N-CH 600V DPAK
Serie :
Automotive, AEC-Q101, MDmesh™ II
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
900 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250mA
Gate Lading (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs (maks) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
363pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
45W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D2PAK
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Siste nytt
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