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- Delnummer:
- NP80N04PLG-E1B-AY
- Produsent:
- Renesas Electronics America
- Detaljert beskrivelse:
- MOSFET N-CH 40V 80A TO-263.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Tyristorer - TRIAC, Transistorer - programmerbar enhet, Transistorer - Bipolar (BJT) - RF, Transistorer - FET, MOSFET - Arrays, Transistorer - spesialformål and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in Renesas Electronics America NP80N04PLG-E1B-AY electronic components. NP80N04PLG-E1B-AY can be shipped within 24 hours after order. If you have any demands for NP80N04PLG-E1B-AY, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NP80N04PLG-E1B-AY Produktegenskaper
Delnummer :
NP80N04PLG-E1B-AY
Produsent :
Renesas Electronics America
Beskrivelse :
MOSFET N-CH 40V 80A TO-263
Serie :
-
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
40V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
4.5 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
135nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6900pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
1.8W (Ta), 115W (Tc)
Driftstemperatur :
175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
TO-263
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Siste nytt
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