DMN2011UFDE-7 Priser (USD) [330803stk Lager]
- 1 pcs$0.11181
- 3,000 pcs$0.09935
- Delnummer:
- DMN2011UFDE-7
- Produsent:
- Diodes Incorporated
- Detaljert beskrivelse:
- MOSFET N-CH 20V 11.7A UDFN2020-6.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - FET, MOSFET - En, Transistorer - FET, MOSFET - Arrays, Power Driver-moduler, Dioder - Zener - Arrays, Dioder - RF and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurransefordel:
- We specialize in Diodes Incorporated DMN2011UFDE-7 electronic components. DMN2011UFDE-7 can be shipped within 24 hours after order. If you have any demands for DMN2011UFDE-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2011UFDE-7 Produktegenskaper
Delnummer :
DMN2011UFDE-7
Produsent :
Diodes Incorporated
Beskrivelse :
MOSFET N-CH 20V 11.7A UDFN2020-6
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
11.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, vgs :
9.5 mOhm @ 7A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
56nC @ 10V
Vgs (maks) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
2248pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
610mW (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
U-DFN2020-6 (Type E)
Pakke / sak :
6-UDFN Exposed Pad
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