BSZ097N04LSGATMA1 Priser (USD) [273814stk Lager]
- 1 pcs$0.13508
- Delnummer:
- BSZ097N04LSGATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 40V 40A TSDSON-8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - RF, Power Driver-moduler, Dioder - RF, Transistorer - Bipolar (BJT) - Singel, Transistorer - FET, MOSFET - En, Dioder - Bridge likerettere, Transistorer - Bipolar (BJT) - RF and Transistorer - IGBT-er - singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies BSZ097N04LSGATMA1 electronic components. BSZ097N04LSGATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ097N04LSGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ097N04LSGATMA1 Produktegenskaper
Delnummer :
BSZ097N04LSGATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 40V 40A TSDSON-8
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
40V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
12A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
9.7 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2V @ 14µA
Gate Lading (Qg) (Max) @ Vgs :
24nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1900pF @ 20V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.1W (Ta), 35W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TSDSON-8
Pakke / sak :
8-PowerTDFN
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