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- Delnummer:
- IPS118N10N G
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 100V 75A TO251-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Transistorer - programmerbar enhet, Tyristorer - DIAC, SIDAC, Dioder - likerettere - singel, Dioder - Zener - Singel, Transistorer - Bipolar (BJT) - Singel, Transistorer - FET, MOSFET - En and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPS118N10N G electronic components. IPS118N10N G can be shipped within 24 hours after order. If you have any demands for IPS118N10N G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPS118N10N G Produktegenskaper
Delnummer :
IPS118N10N G
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 75A TO251-3
Serie :
OptiMOS™
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
11.8 mOhm @ 75A, 10V
Vgs (th) (Max) @ Id :
4V @ 83µA
Gate Lading (Qg) (Max) @ Vgs :
65nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4320pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
125W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO251-3
Pakke / sak :
TO-251-3 Stub Leads, IPak
Siste nytt
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