RYC002N05T316 Priser (USD) [1198992stk Lager]
- 1 pcs$0.03410
- 3,000 pcs$0.03393
- Delnummer:
- RYC002N05T316
- Produsent:
- Rohm Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CHANNEL 50V 200MA SST3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - RF, Transistorer - IGBT-er - Arrays, Transistorer - FET, MOSFET - RF, Dioder - Zener - Arrays, Dioder - likerettere - singel, Transistorer - programmerbar enhet and Transistorer - IGBT-er - singel ...
- Konkurransefordel:
- We specialize in Rohm Semiconductor RYC002N05T316 electronic components. RYC002N05T316 can be shipped within 24 hours after order. If you have any demands for RYC002N05T316, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RYC002N05T316 Produktegenskaper
Delnummer :
RYC002N05T316
Produsent :
Rohm Semiconductor
Beskrivelse :
MOSFET N-CHANNEL 50V 200MA SST3
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
50V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V
Rds On (Max) @ Id, vgs :
2.2 Ohm @ 200mA, 4.5V
Vgs (th) (Max) @ Id :
800mV @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
-
Vgs (maks) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
26pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
350mW (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
SST3
Pakke / sak :
TO-236-3, SC-59, SOT-23-3
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