TK100L60W,VQ Priser (USD) [2996stk Lager]
- 1 pcs$15.90046
- 10 pcs$14.70792
- 100 pcs$12.56136
- Delnummer:
- TK100L60W,VQ
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N CH 600V 100A TO3PL.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - JFET-er, Tyristorer - TRIAC, Transistorer - programmerbar enhet, Dioder - Zener - Arrays, Dioder - Zener - Singel, Transistorer - Bipolar (BJT) - RF, Transistorer - IGBT-er - moduler and Dioder - Variabel kapasitet (Varicaps, Varactors) ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TK100L60W,VQ electronic components. TK100L60W,VQ can be shipped within 24 hours after order. If you have any demands for TK100L60W,VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK100L60W,VQ Produktegenskaper
Delnummer :
TK100L60W,VQ
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N CH 600V 100A TO3PL
Serie :
DTMOSIV
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
18 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 5mA
Gate Lading (Qg) (Max) @ Vgs :
360nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
15000pF @ 30V
FET-funksjon :
Super Junction
Effektdissipasjon (maks) :
797W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-3P(L)
Pakke / sak :
TO-3PL
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